SI4401BDY-T1-GE3 – VISHAY

Part Number:

SI4401BDY-T1-GE3

Manufacturer:

VISHAY

Date Code:

20+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 30 V, 8 A, 22 mΩ Rds(on), SO-8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The SI4401BDY-T1-GE3 is an N-Channel MOSFET manufactured by VISHAY. This transistor is designed for power switching applications, offering a drain-source voltage of 30V and a continuous drain current of 8A. It is characterized by a low on-state resistance (Rds(on)) of 22 mΩ, minimizing power loss during operation. The component is housed in an industry-standard SO-8 package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
30V Drain-Source Voltage (Vds)
8A Continuous Drain Current (Id)
22 mΩ On-State Resistance (Rds(on) @ Vgs=10V)

Applications

This MOSFET is commonly used in various power management and load switching scenarios. Its low on-resistance makes it suitable for efficient power conversion and control in diverse electronic systems.

DC-DC Converters
Load Switching
Power Management Circuits