PMV31XN,215 – NEXPERIA
Part Number:
PMV31XN,215
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel Trench MOSFET Transistor, 20 V
Datasheet:
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Product Details:
Overview
The PMV31XN,215 is an N-Channel enhancement mode Field Effect Transistor (MOSFET) from NEXPERIA. This device utilizes Trench MOSFET technology and is designed for low voltage, low RDS(on) switching applications. It is supplied in a leadless DFN2020D-3 (SOT1163) surface mount package.
Key Features
- N-Channel Enhancement Mode
- Low On-Resistance (RDS(on))
- 20 V Drain-Source Voltage (VDS)
- Trench MOSFET Technology
Applications
This N-Channel MOSFET is commonly used in circuits requiring efficient power switching and load management. Its low on-state resistance minimizes power loss, making it suitable for various electronic systems.
- DC-DC Conversion
- Load Switching
- Power Management Circuits
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