PMEG3010EB – NXP

Part Number:

PMEG3010EB

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

P-Channel MOSFET, 30V Vds, 3A Id, SOT-23

Datasheet:

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Product Details:

Overview

The PMEG3010EB is a P-channel enhancement mode MOSFET manufactured by NXP. This transistor is designed for low-side switching applications requiring moderate current handling capabilities. It features a drain-source voltage rating of 30V and a continuous drain current of 3A. The PMEG3010EB is supplied in a compact SOT-23 surface-mount package.

Key Features

P-Channel Enhancement Mode
30V Drain-Source Voltage (Vds)
3A Continuous Drain Current (Id)
Low On-State Resistance

Applications

This P-channel MOSFET is suitable for a variety of power management and switching functions in portable devices and general-purpose electronic circuits. Its compact size and efficient operation make it a viable choice for space-constrained designs.

Load Switching
Power Management Circuits
DC-DC Conversion