P-Channel MOSFET, 30V, 2A, SOT-23; Vgs(th): 1-3V; Rds(on): 0.15Ω.
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The PMEG3002AEB is a P-Channel MOSFET manufactured by NXP. This enhancement mode field-effect transistor is designed for low-side switching applications. It features a drain-source voltage of 30V and a continuous drain current of 2A. The device is housed in a compact SOT-23 package, making it suitable for space-constrained designs.
This P-Channel MOSFET is commonly used in various electronic circuits requiring efficient switching. Its low on-resistance and compact size make it suitable for portable devices and power management systems. The component facilitates load switching and reverse polarity protection in diverse electronic implementations.