PMDPB30XN – NXP

Part Number:

PMDPB30XN

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

Dual N-Channel MOSFET Transistor, 5.3 A, 20 V, 0.032 Ohm, 4.5 V, 650 mV

Datasheet:

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Product Details:

Overview

The PMDPB30XN is a dual N-Channel enhancement mode MOSFET transistor manufactured by NXP. This device is designed for high-speed switching applications requiring low on-state resistance. It features a drain-source voltage of 20V and a continuous drain current of 5.3A. The PMDPB30XN is supplied in a leadless DFN2020D-6 (SOT1176) surface mount package.

Key Features

Dual N-Channel configuration
Low on-resistance (Rds(on) = 0.032 Ohm)
Gate-source threshold voltage (Vgs(th) = 650 mV)
Drain-source voltage (Vds) of 20V

Applications

This dual MOSFET is suitable for a variety of power management and load switching tasks. Its low on-resistance minimizes power dissipation, making it ideal for efficient circuit designs. It is frequently used in portable devices and battery-powered systems.

DC-DC Converters
Load Switching
Power Management Circuits