PJMF190N60E1_T0_00001 – PANJIT

Electronic Components
 
Part Number:
PJMF190N60E1_T0_00001
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
Not Applicable
 
 
COO:
CHINA
 
 
Description:

600 V, 20 A, 190 mOhm N‑Channel MOSFET, ITO‑220AB‑F Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The PJMF190N60E1_T0_00001 is a 600V, 20A N-Channel MOSFET manufactured by PANJIT. This power MOSFET is designed for high-voltage switching applications and features a typical on-state resistance of 190 mOhm. It is supplied in an ITO-220AB-F package, offering efficient thermal dissipation.

Key Features

  • 600V Drain-Source Voltage (Vds)
  • 20A Continuous Drain Current (Id)
  • 190 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is commonly employed in power electronics circuits requiring efficient switching and high voltage capabilities. Its characteristics make it suitable for various industrial and consumer applications.

  • Switch-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • High-Voltage DC-DC Converters
 
 
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