PJMF280N65E1_T0_00001 – PANJIT

Part Number:

PJMF280N65E1_T0_00001

Manufacturer:

PANJIT

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

CHINA

Description:

N-Channel MOSFET, 650 V, 13.8 A, 280 mOhm, ITO-220AB-F Package

Datasheet:

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Product Details:

Overview

The PJMF280N65E1_T0_00001 is a discrete N-Channel enhancement mode MOSFET manufactured by PANJIT. This component is designed for high-voltage switching applications, featuring a drain-source voltage rating of 650V and a continuous drain current of 13.8A. It exhibits a typical on-state resistance of 280 mOhms and is available in an isolated TO-220AB-F package.

Key Features

650V Drain-Source Voltage (Vds)
13.8A Continuous Drain Current (Id)
280 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
Isolated TO-220AB-F Package

Applications

This MOSFET is suitable for various power switching circuits and systems. Its voltage and current handling capabilities make it applicable in several areas.

Power Factor Correction (PFC) circuits
Switch Mode Power Supplies (SMPS)
High-Voltage DC-DC Converters