PHT4NQ10T,135 – NXP

 
Part Number:
PHT4NQ10T,135
 
 
Manufacturer:
 
 
Date Code:
18+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N-Channel MOSFET, 100V, 3.5A, 6.9W, SOT-223

 
 
Datasheet:
 
 
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Stock Quantity: 535

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535 in stock

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Product Details:

Overview

The PHT4NQ10T,135 is an N-Channel enhancement mode MOSFET manufactured by NXP. This transistor is designed for switching applications requiring a voltage rating of 100V and a continuous drain current of 3.5A. It features a power dissipation of 6.9W and is supplied in a SOT-223 surface mount package.

Key Features

  • N-Channel Enhancement Mode
  • Voltage Rating: 100V
  • Continuous Drain Current: 3.5A
  • Power Dissipation: 6.9W

Applications

This MOSFET is suitable for a variety of power management and switching circuits. Its characteristics make it appropriate for use in systems where efficient power control is needed.

  • DC-DC Converters
  • Load Switching
  • Power Management Circuits
 
 
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