PBSS4140DPN – NXP
Part Number:
PBSS4140DPN
Manufacturer:
NXP
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
Description:
NPN/PNP Bipolar Transistor Array, 40 V, 370 mW, -1 A, 300, SOT-457
Datasheet:
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Product Details:
Overview
The PBSS4140DPN is a bipolar transistor array manufactured by NXP. This device incorporates both an NPN and a PNP transistor within a single SOT-457 package. It is designed for general purpose amplification and switching applications requiring complementary transistor pairs. The device has a collector-emitter voltage rating of 40 V and a power dissipation of 370 mW. The maximum collector current is rated at -1 A, and it exhibits a current gain (hFE) of 300.
Key Features
- NPN/PNP complementary transistor pair
- 40 V collector-emitter voltage
- -1 A maximum collector current
- 370 mW power dissipation
Applications
This transistor array is suitable for various electronic circuits where both NPN and PNP transistors are needed. It is commonly used in designs requiring push-pull configurations or complementary amplification stages. The compact SOT-457 package makes it ideal for space-constrained applications.
- Push-pull amplifiers
- Complementary output stages
- DC-DC converters
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