PBSS305ND – NXP
Part Number:
PBSS305ND
Manufacturer:
Date Code:
100
RoHS:
RoHS Compliant
MSL:
–
COO:
Description:
NPN BJT, 100 V, 1 A I(C), 6 Pin, Power Bipolar Transistor
Datasheet:
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Stock Quantity: 2051
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.59 |
| 10+ | |
| 50+ | |
| 100+ |
2051 in stock
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Product Details:
Overview
The PBSS305ND is an NPN bipolar junction transistor (BJT) manufactured by NXP. This power bipolar transistor is designed for amplification and switching applications requiring a collector current (I(C)) of up to 1 A and a collector-emitter voltage (VCEO) of 100 V. It is supplied in a 6-pin package suitable for power dissipation.
Key Features
- NPN Transistor Type
- 100 V Collector-Emitter Voltage (VCEO)
- 1 A Continuous Collector Current (I(C))
- Power Bipolar Transistor
Applications
This NPN BJT is commonly used in circuits where amplification or switching of moderate power signals is needed. Its voltage and current ratings make it suitable for a range of industrial and consumer electronic devices.
- Linear Amplifiers
- Switching Regulators
- Motor Control Circuits
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