MW7IC2020NT1 – NXP
Part Number:
MW7IC2020NT1
Manufacturer:
Date Code:
1949
RoHS:
RoHS Compliant
MSL:
COO:
SOUTH KOREA
Description:
NXP, RF MOSFET, 28V, 40mA, 2.14GHz, 32.6dB, 2.4W, 24-PQFN (8×8)
Datasheet:
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Stock Quantity: 95
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 20 |
| 10+ | |
| 50+ | |
| 100+ |
95 in stock
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Product Details:
Overview
The MW7IC2020NT1 is an RF power MOSFET from NXP Semiconductors. This transistor is designed for high-frequency amplification at 28V. It delivers a gain of 32.6dB at 2.14 GHz, with a drain current of 40mA and an output power of 2.4W. The component is packaged in a 24-PQFN (8×8) for efficient thermal management and compact board integration.
Key Features
- 28V operating voltage
- 2.14 GHz frequency
- 32.6 dB power gain
- 2.4W output power
Applications
This RF MOSFET is typically used in radio frequency amplifier circuits and high-speed switching applications. Its characteristics make it suitable for deployment in various communication and industrial environments.
- Wireless infrastructure
- Industrial RF generators
- Test and measurement equipment
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