MJD127T4G – ON-SEMI
Part Number:
MJD127T4G
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
PNP Darlington BJT 100V 8A 4MHz 1.75W DPAK SMD Transistor
Datasheet:
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Product Details:
Overview
The MJD127T4G is a PNP Darlington bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for high current gain applications, featuring a collector-emitter voltage rating of 100V and a continuous collector current of 8A. It has a transition frequency of 4MHz and a power dissipation of 1.75W. The MJD127T4G is supplied in a DPAK surface-mount package.
Key Features
- PNP Darlington Configuration
- 100V Collector-Emitter Voltage (VCEO)
- 8A Continuous Collector Current (IC)
- 4MHz Transition Frequency (fT)
- DPAK Surface Mount Package
Applications
This Darlington transistor is typically used in applications requiring significant current amplification or switching. The DPAK package allows for efficient heat dissipation in moderate power designs.
- Motor Control Circuits
- Power Amplifiers
- Switching Regulators
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