MJD112T4G – ON-SEMI

Electronic Components
 
Part Number:
MJD112T4G
 
 
Manufacturer:
 
 
Date Code:
21+
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

NPN Darlington Transistor, 100 V, 2 A, DPAK Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The MJD112T4G is an NPN Darlington transistor manufactured by ON Semiconductor. This device is designed for high current gain applications, providing amplification up to 2 Amps. It features a collector-emitter voltage rating of 100V and is supplied in a DPAK surface-mount package for efficient thermal management and automated assembly.

Key Features

  • NPN Darlington Configuration
  • Collector-Emitter Voltage (VCEO): 100V
  • Continuous Collector Current (IC): 2A
  • DPAK Surface Mount Package

Applications

This Darlington transistor is commonly employed in circuits requiring substantial current amplification or switching. Its high gain and voltage capabilities make it suitable for diverse electronic systems.

  • Motor Control Circuits
  • Power Amplifiers
  • Solenoid Drivers
 
 
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