IPP65R155CFD7 – INFINEON

Electronic Components
 
Part Number:
IPP65R155CFD7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N-Channel, 650 V, 15 A, 131 mOhm MOSFET, TO‑220 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPP65R155CFD7 is a discrete N-Channel Power MOSFET manufactured by Infineon Technologies. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 650V and a continuous drain current of 15A. It exhibits a typical on-state resistance (RDS(on)) of 131 mOhms. The device is housed in a through-hole TO-220 package.

Key Features

  • 650V Drain-Source Voltage (Vds)
  • 15A Continuous Drain Current (Id)
  • 131 mOhm On-State Resistance (RDS(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is commonly employed in power electronics circuits requiring efficient high-voltage switching. Its characteristics make it suitable for various power conversion and control systems.

  • Switch-Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) Circuits
  • Motor Control
 
 
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