IPP60R190P6 – INFINEON

Electronic Components
 
Part Number:
IPP60R190P6
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N‑Channel MOSFET, 57 A, 650 V, 190 mOhm, TO‑220 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPP60R190P6 is an N-Channel power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 650V and a continuous drain current of 57A. It features a typical on-state resistance of 190 mOhm. The IPP60R190P6 is supplied in a TO-220 package.

Key Features

  • N-Channel enhancement mode
  • 650V Drain-Source Voltage (Vds)
  • 57A Continuous Drain Current (Id)
  • 190 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is commonly utilized in power electronics circuits requiring efficient and reliable switching performance. Its characteristics make it suitable for a range of industrial and commercial applications.

  • Switch-mode power supplies (SMPS)
  • Power factor correction (PFC) circuits
  • Motor control circuits
 
 
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