IPP60R022S7 – INFINEON

Part Number:

IPP60R022S7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

GERMANY

Description:

600 V, 23 A N‑Channel MOSFET, 20 mOhm at 12 V

Datasheet:

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Product Details:

Overview

The IPP60R022S7 is a discrete N-Channel Power MOSFET manufactured by Infineon Technologies. This component is designed for high-efficiency switching applications, providing a drain-source voltage (Vds) rating of 600V and a continuous drain current (Id) of 23A. It exhibits a low on-state resistance (Rds(on)) of 22 milliohms at a gate-source voltage (Vgs) of 12V, minimizing conduction losses. The device is supplied in a through-hole TO-220 package.

Key Features

600V Drain-Source Voltage (Vds)
23A Continuous Drain Current (Id)
22 mOhm On-State Resistance (Rds(on) @ Vgs=12V)
N-Channel Enhancement Mode
TO-220 Package

Applications

This MOSFET is suitable for use in a variety of power electronics systems where efficient power conversion is required. Its low on-resistance contributes to reduced heat dissipation, making it appropriate for high-power density designs.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Uninterruptible Power Supplies (UPS)