HMC308ETR – HITTITE

The HMC308ETR is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) fabricated using a heterojunction bipolar transistor (HBT) process. This amplifier operates within the 800 MHz to 3.8 GHz frequency range, optimized for GPS and other receiver front-end applications. The HMC308ETR exhibits a typical gain of 18 dB with a noise figure of 1.5 dB at 2 GHz, and an output IP3 of +15 dBm. It requires a single positive supply voltage, typically +3V to +5V, and draws approximately 30 mA of current. The device is packaged in a small 6-lead SOT23 surface-mount package, facilitating compact PCB designs. Input and output matching are typically achieved through external components, allowing for performance optimization across the specified frequency band. The HMC308ETR is sensitive to electrostatic discharge (ESD) and appropriate handling precautions are required.