Dual N‑Channel MOSFET, 30 V, 7.5 A, 8‑SOIC
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The FDS6910 is a dual N-Channel enhancement mode MOSFET from FSC. This component is designed for power management and switching applications. It features two independent N-Channel MOSFETs within a single 8-SOIC package, offering efficient space utilization. The device operates at a maximum drain-source voltage of 30V and a continuous drain current of 7.5A.
This dual N-Channel MOSFET is suitable for a variety of power control and load switching tasks. Its compact size and efficient performance make it ideal for use in portable devices and space-constrained circuit designs.