FDS6675BZ – ONSEMI
Part Number:
FDS6675BZ
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
P‑Channel MOSFET, 30 V, 11 A, 8‑SOIC
Datasheet:
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Product Details:
Overview
The FDS6675BZ is a P-Channel enhancement mode MOSFET manufactured by ONSEMI. This device is designed for power management applications requiring efficient switching and low on-resistance. It features a voltage rating of 30V and a continuous drain current of 11A. The FDS6675BZ is supplied in an industry-standard 8-SOIC package.
Key Features
- P-Channel MOSFET configuration
- Voltage rating: 30V
- Continuous drain current: 11A
- Low on-resistance (RDS(on))
Applications
This P-Channel MOSFET is commonly used in a variety of power control and switching circuits. Its characteristics make it suitable for use in battery management systems and load switching applications.
- Battery management systems
- Load switching
- DC-DC converters
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