FDS6681Z – ONSEMI
Part Number:
FDS6681Z
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
P-Channel MOSFET, 30V, 4.6mOhm, PowerTrench, SOIC-8, Surface Mount.
Datasheet:
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Product Details:
Overview
The FDS6681Z is a P-Channel enhancement mode MOSFET manufactured by ONSEMI. This device utilizes ONSEMI’s PowerTrench process, offering low on-resistance and fast switching speeds. It is designed for load switching and power management applications. The FDS6681Z is supplied in a SOIC-8 surface mount package and is rated for a drain-source voltage of 30V with a typical on-resistance of 4.6mOhm.
Key Features
- P-Channel MOSFET
- 30V Drain-Source Voltage
- 4.6mOhm On-Resistance (typical)
- PowerTrench Technology
- SOIC-8 Surface Mount Package
Applications
This P-Channel MOSFET is commonly used in various electronic circuits requiring efficient power control and switching. Its low on-resistance minimizes power losses, making it suitable for battery-powered systems and high-current applications.
- Load Switching
- Power Management
- DC-DC Conversion
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