DMT6012LSS-13 – DIODES INCORPORATED
Part Number:
DMT6012LSS-13
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N/P-Channel FET, 60 V, 11 mOhm, 10.4 A, SO8 Package
Datasheet:
Spotted a problem with product information? – let us know
ORDER NOW
Stock Quantity: 0
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Product Details:
Overview
The DMT6012LSS-13 is a complementary N/P-Channel MOSFET manufactured by DIODES INCORPORATED. This Field-Effect Transistor is designed for power switching applications requiring efficient performance at voltages up to 60V. It features a low on-state resistance of 11 mOhm and a continuous drain current capability of 10.4A. The component is housed in a standard SO8 surface-mount package.
Key Features
- N/P-Channel Configuration
- 60V Drain-Source Voltage
- 11 mOhm On-State Resistance
- 10.4A Continuous Drain Current
Applications
This MOSFET is commonly used in power management circuits and load switching applications. Its low resistance and voltage rating make it suitable for various electronic systems requiring efficient power control.
- DC-DC Converters
- Load Switching
- Power Management Systems
Spotted a problem with product information? – let us know
