DMT6009LSS-13 – DIODES INCORPORATED

Part Number:

DMT6009LSS-13

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

MOSFET, N-Ch, 60V, 10.8A, 0.009Ω, SO-8FL

Datasheet:

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Product Details:

Overview

The DMT6009LSS-13 is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This device is designed for power switching applications requiring efficient performance. It features a drain-source voltage rating of 60V and a continuous drain current of 10.8A. The device exhibits a low on-state resistance of 0.009Ω, minimizing power losses during operation. The DMT6009LSS-13 is supplied in a SO-8FL package.

Key Features

N-Channel enhancement mode
60V drain-source voltage
10.8A continuous drain current
Low on-state resistance (0.009Ω)

Applications

This MOSFET is suitable for various power management and switching functions in electronic systems. Its characteristics make it useful in applications where energy efficiency and compact size are important design considerations.

DC-DC converters
Load switching
Power management circuits