BUK9Y09-40B – NXP
N-Channel MOSFET, 40V Vds, 120A Id, D2PAK Package.
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Overview
The BUK9Y09-40B is a discrete N-Channel MOSFET manufactured by NXP. This power MOSFET is designed for switching applications requiring efficient power handling. It features a drain-source voltage (Vds) rating of 40V and a continuous drain current (Id) capability of 120A. The component is housed in a D2PAK surface-mount package, suitable for automated assembly and offering good thermal performance.
Key Features
- N-Channel enhancement mode MOSFET
- 40V Drain-Source Voltage (Vds)
- 120A Continuous Drain Current (Id)
- D2PAK Surface Mount Package
Applications
This N-Channel MOSFET is commonly used in various power management and switching circuits. Its high current and voltage ratings make it suitable for applications requiring efficient power control and low on-state resistance. The D2PAK package allows for effective heat dissipation in demanding environments.
- DC-DC Converters
- Motor Control Circuits
- Load Switching
