N‑Channel MOSFET, 600 V, 0.12 A, SOT‑223 Package
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The BSP125 H6433 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for high-voltage switching applications, offering a drain-source breakdown voltage of 600V and a continuous drain current of 0.12A. It is supplied in a compact SOT-223 surface-mount package, suitable for automated assembly.
This MOSFET is commonly used in circuits requiring high voltage control and efficient power management. Its characteristics make it suitable for various electronic devices and systems.