BSC265N10LSF G – INFINEON

Part Number:

BSC265N10LSF G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 100 V, 40 A, 26.5 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC265N10LSF G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 100V and a continuous drain current of 40A. The device exhibits a typical on-state resistance of 26.5 mOhm. It is supplied in a TDSON‑8 surface-mount package.

Key Features

N-Channel enhancement mode
V_DS: 100V
I_D: 40A
R_DS(on): 26.5 mΩ (typical)

Applications

This MOSFET is commonly used in various power electronic circuits. Its characteristics make it suitable for use in systems demanding efficient switching and low power dissipation.

Synchronous rectification
DC-DC converters
Motor control