BSC252N10NSF G – INFINEON

Part Number:

BSC252N10NSF G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 100 V, 40 A, 25 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC252N10NSF G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring a voltage rating of 100V and a continuous drain current of 40A. It features a low on-state resistance of 25 mOhm and is supplied in a space-saving TDSON‑8 surface mount package.

Key Features

N-Channel enhancement mode
Voltage rating: 100V
Continuous drain current: 40A
On-state resistance (Rds(on)): 25 mOhm
TDSON-8 package

Applications

This MOSFET is suitable for a variety of power switching circuits and load control implementations. Its characteristics make it appropriate for applications in regulated power supplies and motor control.

Synchronous rectification
DC-DC converters
Power management systems