BC817-40LT1G – ONSEMI
Part Number:
BC817-40LT1G
Manufacturer:
Date Code:
0946
RoHS:
RoHS Compliant
MSL:
1
COO:
Description:
NPN Bipolar Transistor, 45V, 0.5A, 200MHz, SOT-23 Package
Datasheet:
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Stock Quantity: 5321
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.26 |
| 10+ | |
| 50+ | |
| 100+ |
5321 in stock
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Product Details:
Overview
The ONSEMI BC817-40LT1G is a highly versatile NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Its key operational characteristic lies in its high DC current gain (hFE) of up to 250, enabling significant signal amplification from a small base current. A critical design consideration when utilizing this device in high-frequency switching circuits is its relatively low transition frequency (fT) of 100 MHz; exceeding this limit can lead to degraded switching performance and increased transient distortion, necessitating careful impedance matching and bandwidth limiting in sensitive designs.
Key Features
- NPN Bipolar Junction Transistor (BJT)
- Maximum DC Collector Current (Ic): 500 mA
- Collector-Emitter Voltage (VCEO): 45 V
- DC Current Gain (hFE) Min: 250
- Transition Frequency (fT): 100 MHz
- Package: SOT-23-3 (2.9mm x 1.3mm x 0.94mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power audio amplification stages
- General-purpose signal switching in control circuits
- Voltage regulation pre-drivers
- Interfacing with microcontrollers for actuator control
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