BC817-25LT1G – ONSEMI

Overview

The ONSEMI BC817-25LT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for switching and amplification tasks in compact electronic systems. Its key operational characteristic is its moderate current handling capability (500 mA continuous collector current) combined with a respectable gain (hFE min 160) at typical operating points. A critical design consideration when utilizing this SOT-23-3 packaged device is managing its power dissipation (225 mW), as exceeding this limit can lead to thermal runaway and premature component failure, especially in densely populated PCBs where heat sinking is limited. This necessitates careful PCB layout and thermal management strategies.

Key Features

• NPN Bipolar Junction Transistor (BJT)
• Maximum DC Collector Current: 500 mA
• Collector-Emitter Voltage (VCEO) Max: 45 V
• DC Collector/Base Gain (hFE) Min: 160
• Power Dissipation (Pd): 225 mW
• Package: SOT-23-3 (2.9 mm x 1.3 mm x 0.94 mm)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-power signal switching in consumer electronics
• Driving small indicator LEDs in portable devices
• Basic amplification stages in audio pre-amplifiers
• Voltage level shifting in microcontroller interfaces