BC807-40 – PHILIPS

Overview

The Good-Ark Semiconductor BC807-40 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its critical operational characteristic is the 45V collector-emitter breakdown voltage, enabling its use in moderately high-voltage circuits. A key design consideration for this SOT-23 packaged device is managing its 300mW power dissipation; exceeding this limit can lead to thermal runaway, a common trade-off in miniaturized components where heat sinking is limited, necessitating careful component selection and layout to ensure long-term reliability.

Key Features

• PNP Bipolar Transistor
• 45 V Collector-Emitter Breakdown Voltage (VCEO)
• 500 mA Continuous Collector Current (IC)
• Minimum DC Current Gain (hFE) of 100 at 100mA, 1V
• 100 MHz Transition Frequency (fT)
• 300 mW Maximum Power Dissipation
• SOT-23 Surface Mount Package (TO-236-3, SC-59)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-power audio amplification stages
• General-purpose signal switching circuits
• Voltage regulation pre-drivers
• Small signal control in battery-powered devices