BC556BG – ONSEMI

 
Part Number:
BC556BG
 
 
Manufacturer:
 
 
Date Code:
06
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

65 V, 0.1 A PNP Bipolar Junction Transistor, TO‑92 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The onsemi BC556BG is a general-purpose PNP bipolar junction transistor (BJT) designed for linear amplification and switching applications. Its key operational characteristic is its moderate current gain (hFE) of 180 minimum at 2mA collector current, enabling it to effectively control larger currents with small base signals. A critical design consideration when utilizing this device in high-frequency circuits is its transition frequency (fT) of 280MHz; while sufficient for many audio and low-frequency control tasks, designers must be mindful of potential bandwidth limitations and parasitic effects at higher RF frequencies, often necessitating careful layout and component selection to mitigate signal degradation.

Key Features

  • Collector-Emitter Breakdown Voltage (Vce): 65 V
  • Continuous Collector Current (Ic): 100 mA
  • DC Current Gain (hFE) Min: 180 @ 2 mA, 5 V
  • Transition Frequency (fT): 280 MHz
  • Power Dissipation (Pd): 625 mW
  • Package: TO-92 (TO-226) Through Hole

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

  • Low-frequency audio amplification stages
  • General-purpose signal switching circuits
  • Voltage regulation pre-driver stages
  • Complementary output stages in push-pull amplifiers
 
 
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