BC550CG – ONSEMI
BJT NPN Transistor, 45V, 100mA, 250MHz, 625mW, TO-92 (TO-226) Package, Through Hole.
Stock Quantity: 59
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.15 |
| 10+ | |
| 50+ | |
| 100+ |
59 in stock
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- 6 month warranty on all stock items
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Overview
The onsemi BC550CG is a high-gain NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its critical operational characteristic lies in its substantial DC current gain (hFE) of 420 at 2mA and 5V, enabling it to effectively control larger currents with minimal base drive. A key design consideration when utilizing the BC550CG is managing its relatively low collector current capability of 100 mA; exceeding this limit can lead to thermal runaway and premature device failure, necessitating careful circuit analysis for power dissipation and load impedance matching, especially in high-frequency scenarios where its 250 MHz transition frequency becomes relevant.
Key Features
- Collector Current (Ic): 100 mA
- Collector-Emitter Voltage (Vce): 45 V
- DC Current Gain (hFE) Min: 420 @ 2mA, 5V
- Transition Frequency (fT): 250 MHz
- Power Dissipation (Pd): 625 mW
- Package: TO-92 (TO-226)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-power audio pre-amplification stages
- Signal level shifting in digital logic interfaces
- Bias current generation for active filters
- General-purpose switching in control circuits
