BAS40-04 – NXP
Small Signal Schottky Diode, Dual Series, 40 V, 200 mA, 380 mV, 200 mA, 125 °C
Stock Quantity: 1237
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.29 |
| 10+ | |
| 50+ | |
| 100+ |
1237 in stock
Contact us for volume pricing
- Same day shipping if ordered before 14.00 GMT
- 6 month warranty on all stock items
- All stock held and shipped from our UK warehouse
- Worldwide shipping available, contact us for a quotation
- We can ship on your DHL or UPS account if required
- Any import duties or taxes are the responsibility of the receiver
Overview
The NXP BAS40-04 is a highly efficient surface-mount Schottky barrier diode meticulously engineered for high-speed switching applications. Its defining characteristic is the exceptionally low forward voltage drop, enabling minimal power dissipation and improved system efficiency, a critical factor in battery-powered devices. A key design consideration often overlooked is the trade-off between this low forward voltage and the diode’s reverse leakage current; while the BAS40-04 offers a competitive balance, designers must carefully evaluate leakage at elevated temperatures to ensure circuit integrity in sensitive analog signal paths.
Key Features
- 40V Repetitive Peak Reverse Voltage (VRRM)
- Low Forward Voltage (VF) of typically 350mV at 10mA
- Fast Switching Speed with minimal reverse recovery time
- Surface Mount SOD-323 package for compact PCB integration
- PN junction guard ring for enhanced transient and ESD protection
- Maximum Junction Temperature: 150°C
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- High-frequency signal coupling in RF front-ends
- Voltage clamping and transient suppression in sensitive digital interfaces
- Power sequencing for low-voltage DC-DC converters
- Demodulation circuits in communication receivers
