BAR66E6327HTSA1 – INFINEON
Part Number:
BAR66E6327HTSA1
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
AUSTRIA
Description:
150 V, 250 mW PIN RF Diode, PG‑SOT23
Datasheet:
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Product Details:
Overview
The BAR66E6327HTSA1 is a PIN RF diode manufactured by Infineon. This diode is designed for radio frequency applications requiring switching and attenuation. It features a reverse voltage rating of 150 V and a power dissipation of 250 mW. The component is housed in a PG‑SOT23 package, suitable for surface mount assembly.
Key Features
- 150 V Reverse Voltage
- 250 mW Power Dissipation
- PG-SOT23 Package
- RF Switching Application
Applications
This PIN diode is commonly used in circuits requiring controlled impedance and signal routing. Its characteristics make it suitable for various RF and microwave systems.
- RF Switches
- Attenuators
- Phase Shifters
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