2N7002KT1G – ONSEMI

Part Number:

2N7002KT1G

Manufacturer:

ONSEMI

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 60 V, 320 mA, SOT-23-3 Package

Datasheet:

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Product Details:

Overview

The 2N7002KT1G is a discrete N-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for low-power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 320mA. The component is supplied in a compact SOT-23-3 surface mount package, suitable for high-density circuit board designs.

Key Features

N-Channel Enhancement Mode
60V Drain-Source Voltage (Vds)
320mA Continuous Drain Current (Id)
Low Threshold Voltage

Applications

This MOSFET is commonly utilized in various switching and amplification circuits. Its low threshold voltage and small package size make it suitable for portable devices and battery-powered applications where efficiency and space are critical. It is also used in logic level conversion and small signal amplification stages.

Load Switching
DC-DC Conversion
Small Signal Amplification