1N5819 – SGS

Overview

The STMicroelectronics 1N5819 is a highly efficient Schottky rectifier designed for low-voltage, high-frequency applications where minimizing power loss is paramount. Its key operational characteristic is a remarkably low forward voltage drop (Vf), typically 550 mV at 1 A, which significantly reduces conduction losses compared to standard silicon PN junction diodes. However, designers must carefully consider the trade-off between this low Vf and the relatively modest 40 V repetitive reverse voltage rating (Vrrm); exceeding this limit can lead to premature breakdown and device failure, necessitating robust overvoltage protection in sensitive circuits.

Key Features

• Forward Current (If): 1 A
• Repetitive Reverse Voltage (Vrrm): 40 V
• Forward Voltage (Vf): 550 mV (typical at 1 A)
• Forward Surge Current (Ifsm): 25 A
• Reverse Current (Ir): 500 µA (maximum at Vrrm)
• Package: DO-41 (Through Hole), 5.2 mm (L) x 2.7 mm (W) x 2.7 mm (H)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-voltage DC-DC converter output rectification
• Reverse polarity protection in battery-powered devices
• High-frequency switching power supply output stages
• Freewheeling diode for inductive load switching