1N5818 – STMicroelectronics

Overview

The STMicroelectronics 1N5818 is a highly efficient Schottky rectifier designed for low-voltage, high-frequency applications where minimal power dissipation is paramount. Its key operational characteristic is the exceptionally low forward voltage drop (Vf) of 500 mV at 1A, which significantly reduces conduction losses compared to standard PN junction diodes. A critical design consideration when employing the 1N5818 is managing its relatively higher reverse leakage current (Ir) of 500 µA at 30V; in sensitive circuits, this leakage can contribute to quiescent current drain or introduce noise, necessitating careful filtering or biasing strategies.

Key Features

• Forward Current (If): 1 A
• Repetitive Reverse Voltage (Vrrm): 30 V
• Forward Voltage (Vf): 500 mV (at 1A)
• Forward Surge Current (Ifsm): 25 A
• Maximum Operating Temperature: +150 °C
• Package: DO-41 (2.7 mm Width x 5.2 mm Length x 2.7 mm Height)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• Low-voltage DC-DC converter output rectification
• Reverse polarity protection in battery-powered devices
• High-frequency switching power supply output stages
• Signal path clamping and voltage steering circuits