BSP149H6327XTSA1 – INFINEON

Part Number:

BSP149H6327XTSA1

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N-Channel MOSFET, 200V, 660mA, 1.8W, PG-SOT223-4, Surface Mount

Datasheet:

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Product Details:

Overview

The BSP149H6327XTSA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for switching applications requiring moderate voltage and current handling capabilities. It features a drain-source voltage rating of 200V and a continuous drain current of 660mA. The device is packaged in a PG-SOT223-4 surface mount package and has a power dissipation rating of 1.8W.

Key Features

N-Channel Enhancement Mode
200V Drain-Source Voltage (Vds)
660mA Continuous Drain Current (Id)
1.8W Power Dissipation
PG-SOT223-4 Package

Applications

This MOSFET is typically used in circuits that require efficient switching of power. Its voltage and current ratings make it suitable for various low to medium power applications.

DC-DC Conversion
Load Switching
Power Management Circuits
LED Drivers