2SC2712-GR,LF(T – TOSHIBA
BJT Transistor, NPN, 50V, 150mA, 80MHz, 150mW, S-Mini, Surface Mount
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Overview
The 2SC2712-GR,LF(T is a discrete NPN Bipolar Junction Transistor (BJT) manufactured by TOSHIBA. This transistor is designed for amplification and switching applications, featuring a collector-emitter voltage (Vceo) of 50V and a collector current (Ic) rating of 150mA. It is housed in a compact S-Mini surface mount package, suitable for high-density circuit board designs. The device exhibits a transition frequency (fT) of 80MHz and a power dissipation of 150mW.
Key Features
- NPN Transistor Polarity
- 50V Collector-Emitter Voltage (Vceo)
- 150mA Collector Current (Ic)
- 80MHz Transition Frequency (fT)
- S-Mini Surface Mount Package
Applications
This NPN transistor is commonly used in various electronic circuits requiring signal amplification or switching capabilities. Its small form factor makes it ideal for applications where board space is limited.
- Audio Amplifiers
- Switching Circuits
- Oscillator Circuits
- Signal Processing Circuits
