2SC2713-BL,LF(T – TOSHIBA

Part Number:

2SC2713-BL,LF(T

Manufacturer:

TOSHIBA

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

THAILAND

Description:

NPN BJT, 120V, 100mA, 100MHz, 150mW, TO-236 SMD Transistor.

Datasheet:

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Product Details:

Overview

The 2SC2713-BL,LF(T is a silicon NPN bipolar junction transistor (BJT) manufactured by TOSHIBA. This device is designed for general purpose amplification and switching applications, featuring a collector-emitter voltage (Vceo) of 120V and a collector current (Ic) rating of 100mA. It offers a transition frequency (ft) of 100MHz and is housed in a compact TO-236 surface-mount package.

Key Features

NPN Silicon BJT
120V Collector-Emitter Voltage
100mA Collector Current
100MHz Transition Frequency

Applications

This transistor is suitable for a variety of electronic circuits requiring signal amplification or switching. Its characteristics make it useful in both low-power and medium-power designs, across different operating conditions.

Audio Amplifiers
Switching Circuits
Signal Processing