IPN80R1K4P7 – INFINEON

Part Number:

IPN80R1K4P7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

800 V, 4 A, 1200 mOhm N‑Channel MOSFET, SOT‑223 Package

Datasheet:

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Product Details:

Overview

The IPN80R1K4P7 is an 800V N-Channel MOSFET manufactured by Infineon Technologies. This power MOSFET is designed for switching applications requiring high voltage blocking capability and moderate current handling. It features a drain-source on-resistance (Rds(on)) of 1200 mOhm and is packaged in a SOT-223 surface mount package.

Key Features

800V Drain-Source Voltage (Vds)
4A Continuous Drain Current (Id)
1200 mOhm On-Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for various power electronic circuits where efficient switching and high voltage operation are necessary. Its characteristics make it useful in several applications.

High-Voltage Power Supplies
LED Lighting
Offline Battery Chargers