IPN80R2K0P7 – INFINEON

Part Number:

IPN80R2K0P7

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel, 800 V, 3 A, 2000 mOhm MOSFET, SOT-223 Package

Datasheet:

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Product Details:

Overview

The IPN80R2K0P7 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high voltage switching applications, featuring a drain-source voltage rating of 800V and a continuous drain current of 3A. It exhibits a typical on-state resistance of 2000 mOhm. The device is supplied in a compact SOT-223 surface-mount package.

Key Features

800V Drain-Source Voltage (Vds)
3A Continuous Drain Current (Id)
2000 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode
SOT-223 Package

Applications

This MOSFET is suitable for various power management and switching circuits where high voltage operation is required. Its characteristics make it applicable in several electronic systems.

Power Factor Correction (PFC) circuits
High Voltage DC-DC converters
LED lighting drivers