IMZ120R030M1H – INFINEON

Electronic Components
 
Part Number:
IMZ120R030M1H
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

1200 V, 56 A N‑Channel MOSFET, 30 mOhm, TO‑247‑4 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IMZ120R030M1H is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is rated for a drain-source voltage of 1200V and a continuous drain current of 56A. It features a typical on-state resistance (Rds(on)) of 30 mOhm. The component is housed in a TO-247-4 package.

Key Features

  • 1200V Drain-Source Voltage (Vds)
  • 56A Continuous Drain Current (Id)
  • 30 mOhm On-State Resistance (Rds(on))
  • N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in high-voltage, high-power switching applications where efficient power conversion is required. Its characteristics make it appropriate for demanding electrical environments.

  • Power Factor Correction (PFC) circuits
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
 
 
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