IMZ120R090M1H – INFINEON

Part Number:

IMZ120R090M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

AUSTRIA

Description:

1200 V, 26 A, 90 mOhm N‑Channel MOSFET, TO‑247‑4 Package

Datasheet:

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Product Details:

Overview

The IMZ120R090M1H is a high-voltage N-Channel MOSFET manufactured by Infineon. This component is designed for switching applications requiring a drain-source breakdown voltage of 1200V and a continuous drain current of 26A. Its key characteristic is a low on-state resistance of 90 mOhm. The device is packaged in a TO-247-4 housing.

Key Features

1200V Drain-Source Breakdown Voltage
26A Continuous Drain Current
90 mOhm On-State Resistance (RDS(on))
TO-247-4 Package

Applications

This MOSFET is suitable for use in various power electronics systems where efficient and reliable high-voltage switching is needed. Its specifications make it appropriate for demanding environments.

Power Factor Correction (PFC) circuits
High-Voltage DC-DC converters
Solar Inverters