2N7002DW H6327 – INFINEON

Part Number:

2N7002DW H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

60 V, 0.3 A, 3000 mOhm N+N‑Channel MOSFET, SOT‑363 Package

Datasheet:

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Product Details:

Overview

The 2N7002DW H6327 is a dual N-Channel enhancement mode MOSFET manufactured by Infineon. This device features a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) of 0.3A. The on-resistance (Rds(on)) is typically 3000 mOhm. It is supplied in a small SOT-363 surface mount package, suitable for space-constrained applications.

Key Features

Dual N-Channel configuration
Vds: 60V
Id: 0.3A
Rds(on): 3000 mOhm (typical)
SOT-363 Package

Applications

This MOSFET is commonly used in low-power switching applications and load switching. Its small size makes it suitable for portable devices and high-density circuit boards. It can also be used in level shifting and driver circuits.

Low-side switching
Portable electronics
DC-DC conversion