IPD50N06S4-09 – INFINEON

Part Number:

IPD50N06S4-09

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 60 V, 50 A, 9 mOhm, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD50N06S4-09 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current of 50A. The device exhibits a typical on-state resistance (Rds(on)) of 9 mOhm. It is supplied in a TO-252 package for surface mount assembly.

Key Features

N-Channel enhancement mode
Vds: 60V
Id: 50A continuous drain current
Rds(on): 9 mOhm (typical)

Applications

This MOSFET is commonly used in various power electronics circuits where efficient switching is needed. Its characteristics make it suitable for a range of operating conditions and load types.

DC-DC converters
Motor control circuits
Power supplies