IPD50N06S4L-12 – INFINEON

Part Number:

IPD50N06S4L-12

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 60 V, 50 A, 9.6 mOhm, DPAK Package

Datasheet:

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Product Details:

Overview

The IPD50N06S4L-12 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current of 50A. The component is housed in a DPAK (TO-252) package, facilitating surface mount assembly.

Key Features

N-Channel Enhancement Mode
V_DS: 60V
I_D: 50A
R_DS(on): 9.6 mOhm (typical)

Applications

This MOSFET is commonly employed in diverse electronic systems needing efficient power control. Its characteristics make it suitable for use in various voltage regulation and load switching scenarios.

DC-DC converters
Motor control circuits
Power supplies