N‑Channel MOSFET, 57 A, 650 V, 190 mOhm, TO‑220 Package
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The IPP60R190P6 is an N-Channel power MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 650V and a continuous drain current of 57A. It features a typical on-state resistance of 190 mOhm. The IPP60R190P6 is supplied in a TO-220 package.
This MOSFET is commonly utilized in power electronics circuits requiring efficient and reliable switching performance. Its characteristics make it suitable for a range of industrial and commercial applications.