2N7002 H6327 – INFINEON

Electronic Components
 
Part Number:
2N7002 H6327
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

N‑Channel MOSFET, 60 V, 0.3 A, SOT‑23 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The 2N7002 H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for low-power switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of 0.3A. The component is supplied in a compact SOT-23 surface-mount package.

Key Features

  • N-Channel Enhancement Mode
  • 60V Drain-Source Voltage (Vds)
  • 0.3A Continuous Drain Current (Id)
  • Low On-Resistance (Rds(on))
  • SOT-23 Package

Applications

This MOSFET is commonly utilized in various electronic circuits requiring efficient switching capabilities. Its small size and electrical characteristics make it suitable for portable devices and space-constrained designs.

  • Low-Side Switching
  • DC-DC Conversion
  • Load Switching
 
 
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