BSD235C H6327 – INFINEON

Part Number:

BSD235C H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

N+P Channel MOSFET, 0.95/0.53 A, 20 V, SOT‑363 Package

Datasheet:

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Product Details:

Overview

The BSD235C H6327 is a dual N+P channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for low voltage switching applications. It features both an N-channel and a P-channel MOSFET within a single SOT-363 surface-mount package, providing a compact solution for circuit designs. The N-channel MOSFET has a drain current of 0.95A, while the P-channel MOSFET has a drain current of 0.53A, both rated at a drain-source voltage of 20V.

Key Features

Dual N+P Channel Configuration
20V Drain-Source Voltage
0.95A N-Channel Drain Current
0.53A P-Channel Drain Current
SOT-363 Package

Applications

This dual MOSFET is suitable for various low-power switching and amplification tasks. Its compact size and complementary channel configuration make it useful in space-constrained designs. Common deployment areas include portable devices and control circuits.

Load Switching
DC-DC Conversion
Power Management Circuits