BSD235N H6327 – INFINEON

Part Number:

BSD235N H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

Dual N‑Channel MOSFET, 20 V, 0.95 A, SOT‑363 Package

Datasheet:

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Product Details:

Overview

The BSD235N H6327 is a dual N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device features two independent N-Channel transistors within a single SOT-363 surface mount package. It is designed for low voltage, low current switching applications and offers efficient performance in a compact form factor.

Key Features

Dual N-Channel configuration
20 V Drain-Source Voltage (Vds)
0.95 A Continuous Drain Current (Id)
Logic Level Gate Drive
SOT-363 Package

Applications

This dual N-Channel MOSFET is suitable for a variety of low-power applications where space is a constraint. The BSD235N H6327 can be utilized in circuits requiring switching or amplification with minimal board footprint. Its characteristics make it appropriate for battery-powered devices and portable electronics.

Load Switching
DC-DC Conversion
Small Signal Amplification